Influence of driving and parasitic parameters on the switching behaviors of the SiC MOSFET

The SiC MOSFET has lower conduction loss and switching than the Si IGBT, which helps to improve efficiency power density of converter, especially for those having strict requirements volume weight, example, electrical vehicles (EVs), on-board chargers (OBCs), traction drive systems (TDS). However, faster speed will cause overshoot oscillation problems, affect security devices electronic systems. For be better used, combining a theoretical analysis, double-pulse test platform is built. controllable principles MOSFETs are validated. turn-on turn-off delay, di/dt, du/dt, overshoot, under different driving parasitic parameters explored. Finally, some valuable suggestions designing proposed application MOSFET.